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1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 Small Signal Diode
January 2007
1N/FDLL 914/A/B / 916/A/B / 4148 / 4448
Small Signal Diode
LL-34 COLOR BAND MARKING DEVICE 1ST BAND 2ND BAND FDLL914 BLACK BROWN FDLL914A BLACK GRAY FDLL914B BROWN BLACK FDLL916 BLACK RED FDLL916A BLACK WHITE FDLL916B BROWN BROWN FDLL4148 BLACK BROWN FDLL4448 BROWN BLACK -1st band denotes cathode terminal and has wider width
LL-34 DO-35
Cathode is denoted with a black band
THE PLACEMENT OF THE EXPANSION GAP HAS NO RELATIONSHIP TO THE LOCATION OF THE CATHODE TERMINAL
Absolute Maximum Ratings* T =25C unless otherwise noted
a
Symbol
VRRM IO IF if IFSM
Parameter
Maximum Repetitive Reverse Voltage Average Rectified Forward Current DC Forward Current Recurrent Peak Forward Current Non-repetitive Peak Forward Surge Current Pulse Width = 1.0 second Pulse Width = 1.0 microsecond Storage Temperature Range Operating Junction Temperature
Value
100 200 300 400 1.0 4.0 -65 to +200 175
Units
V mA mA mA A A C C
TSTG TJ
* These ratings are limiting values above which the serviceability of the diode may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 200 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
PD RJA Power Dissipation Thermal Resistance, Junction to Ambient
Parameter
Max.
1N/FDLL 914/A/B / 4148 / 4448 500 300
Units
mW C/W
(c)2007 Fairchild Semiconductor Corporation
1
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1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 Rev. B2
1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 Small Signal Diode
Electrical Characteristics*
Symbol
VR VF Breakdown Voltage Forward Voltage
TA=25C unless otherwise noted
Parameter
Test Conditions
IR = 100A IR = 5.0A
Min.
100 75 620 630
Max.
Units
V V
1N914B/4448 1N916B 1N914/916/4148 1N914A/916A 1N916B 1N914B/4448
IF = 5.0mA IF = 5.0mA IF = 10mA IF = 20mA IF = 20mA IF = 100mA VR = 20V VR = 20V, TA = 150C VR = 75V VR = 0, f = 1.0MHz VR = 0, f = 1.0MHz IF = 10mA, VR = 6.0V (600mA) Irr = 1.0mA, RL = 100
720 730 1.0 1.0 1.0 1.0 25 50 5.0 2.0 4.0 4.0
mV mV V V V V nA A A pF pF ns
IR
Reverse Leakage
CT
Total Capacitance 1N916A/B/4448 1N914A/B/4148 Reverse Recovery Time
trr
* Non-recurrent square wave PW = 8.3ms
Typical Characteristics
160
120
Ta=25 C
o
Ta= 25 C [nA]
100
o
R
[V]
150
R
Reverse Voltage, V
80
Reverse Current, I
1 2 3 5 10 20 30 50 100
140
60
130
40
120
20
110
0
10
Reverse Current, IR [uA]
Reverse Voltage, VR [V]
20
30
50
70
100
GENERAL RULE: The Reverse Current of a diode will approximately double for every ten (10) Degree C increase in Temperature
Figure 1. Reverse Voltage vs Reverse Current BV - 1.0 to 100A
Figure 2. Reverse Current vs Reverse Voltage IR - 10 to 100V
550
750
Ta= 25 C
o
Ta= 25 C
o
[mV]
R
450
Forward Voltage, V
Forward Voltage, V
400
350
300
250
F
[mV]
500
700
650
600
550
500
450
1 2 3 5 10 20 30 50 100
0.1
0.2
0.3
0.5
1
2
3
5
10
Forward Current, IF [uA]
Forward Current, IF [mA]
Figure 3. Forward Voltage vs Forward Current VF - 1 to 100A
Figure 4. Forward Voltage vs Forward Current VF - 0.1 to 10mA
2 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 Rev. B2
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1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 Small Signal Diode
Typical Characteristics
1.6
(Continued)
900
Ta= 25 C
o
Forward Voltage, V F [mV]
[mV]
800
Typical Ta= -40 C
o
1.4
1.2
Forward Voltage, V
F
700
600
Ta= 25 C
o
1.0
500
Ta= +65 C
o
0.8
400
300
0.6 10 20 30 50 100 200 300 500 800
0.01
0.03
0.1
0.3
1
3
10
Forward Current, IF [mA]
Forward Current, IF [mA]
Figure 5. Forward Voltage vs Forward Current VF - 10 to 800mA
Figure 6. Forward Voltage vs Ambient Temperature VF - 0.01 - 20 mA (- 40 to +65C)
0.90
4.0
TA = 25 C
[ns]
o
Ta = 25 C
3.5
o
Total Capacitance (pF)
Reverse Recovery Time, t
0.85
0.80
0.75 0 2 4 6 8 10 12 14
rr
3.0
2.5
2.0
1.5
1.0 10
20
30
40
50
60
REVERSE VOLTAGE (V)
Reverse Recovery Current, Irr [mA]
IF = 10mA , IRR = 1.0 mA , Rloop = 100 Ohms
Figure 7. Total Capacitance
Figure 8. Reverse Recovery Time vs Reverse Recovery Current
500
500
400
Power Dissipation, PD [mW]
400
DO-35
Current (mA)
300
300
200
IF(
AV)
100
- AVE RAG E RE CTIF IED C URRE NT mA
SOT-23
200
100
0 0 50 100
o
0 150 0 50 100 150
o
200
Ambient Temperature ( C)
Temperature [ C]
Figure 9. Average Rectified Current (IF(AV)) vs Ambient Temperature (TA)
Figure 10. Power Derating Curve
3 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 Rev. B2
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1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 Small Signal Diode 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 Small Signal Diode
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PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In Design
Definition
This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I22
4 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 Rev. B2
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